Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / FGD3N60LSDTM-T
Part Number | FGD3N60LSDTM-T |
Datasheet | FGD3N60LSDTM-T datasheet |
Description | INTEGRATED CIRCUIT |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 6A |
Current - Collector Pulsed (Icm) | 25A |
Vce(on) (Max) @ Vge, Ic | 1.5V @ 10V, 3A |
Power - Max | 40W |
Switching Energy | 250µJ (on), 1mJ (off) |
Input Type | Standard |
Gate Charge | 12.5nC |
Td (on/off) @ 25°C | 40ns/600ns |
Test Condition | 480V, 3A, 470 Ohm, 10V |
Reverse Recovery Time (trr) | 234ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252, (D-Pak) |