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| Part Number | BSC072N03LDGATMA1 |
| Datasheet | BSC072N03LDGATMA1 datasheet |
| Description | MOSFET 2N-CH 30V 11.5A 8TDSON |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A |
| Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 15V |
| Power - Max | 57W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8 Dual |