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| Part Number | IPU80R1K4P7AKMA1 | 
| Datasheet | IPU80R1K4P7AKMA1 datasheet | 
| Description | MOSFET N-CH 800V 4A IPAK | 
| Manufacturer | Infineon Technologies | 
| Series | CoolMOS™ | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 800V | 
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.4A, 10V | 
| Vgs(th) (Max) @ Id | 3.5V @ 700µA | 
| Gate Charge (Qg) (Max) @ Vgs | 10.05nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 500V | 
| FET Feature | Super Junction | 
| Power Dissipation (Max) | 32W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | PG-TO251-3 | 
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |