Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTY2N60P
Part Number | IXTY2N60P |
Datasheet | IXTY2N60P datasheet |
Description | MOSFET N-CH 600V 2A D-PAK |
Manufacturer | IXYS |
Series | Polar™ |
Part Status | Last Time Buy |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5.1 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 55W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |