Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / VS-GB100TP120N

Product Introduction

VS-GB100TP120N

Part Number
VS-GB100TP120N
Manufacturer/Brand
Vishay Semiconductor Diodes Division
Description
IGBT 1200V 200A 650W INT-A-PAK
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
42pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number VS-GB100TP120N
Datasheet VS-GB100TP120N datasheet
Description IGBT 1200V 200A 650W INT-A-PAK
Manufacturer Vishay Semiconductor Diodes Division
Series -
Part Status Active
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Power - Max 650W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Supplier Device Package INT-A-PAK

Latest Products for Transistors - IGBTs - Modules

FF650R17IE4VBOSA1

Infineon Technologies

IGBT MODULE VCES 1700V 650A

FF900R12IE4PBOSA1

Infineon Technologies

MODULE IGBT PRIME2-1

FF900R12IE4VBOSA1

Infineon Technologies

IGBT MODULE VCES 1200V 900A

FF900R12IE4VPBOSA1

Infineon Technologies

MODULE IGBT PRIME2-1

FF900R12IP4DBOSA2

Infineon Technologies

IGBT MODULE VCES 1200V 900A

FF900R12IP4DVBOSA1

Infineon Technologies

IGBT MODULE VCES 1200V 900A