Home / Products / Discrete Semiconductor Products / Transistors - JFETs / 2N2609
Part Number | 2N2609 |
Datasheet | 2N2609 datasheet |
Description | JFETS |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Voltage - Breakdown (V(BR)GSS) | 30V |
Drain to Source Voltage (Vdss) | - |
Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 5V |
Current Drain (Id) - Max | 10mA |
Voltage - Cutoff (VGS off) @ Id | 750mV @ 1A |
Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 5V |
Resistance - RDS(On) | - |
Power - Max | 300mW |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 (TO-206AA) |