Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IRF5852TR
Part Number | IRF5852TR |
Datasheet | IRF5852TR datasheet |
Description | MOSFET 2N-CH 20V 2.7A 6-TSOP |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.7A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
Power - Max | 960mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |