Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFSL38N20DPBF
Part Number | IRFSL38N20DPBF |
Datasheet | IRFSL38N20DPBF datasheet |
Description | MOSFET N-CH 200V 43A TO-262-3 |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 54 mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |