Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DN2535N3-G-P013
Part Number | DN2535N3-G-P013 |
Datasheet | DN2535N3-G-P013 datasheet |
Description | MOSFET N-CH 350V 0.12A TO92-3 |
Manufacturer | Microchip Technology |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 350V |
Current - Continuous Drain (Id) @ 25°C | 120mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Rds On (Max) @ Id, Vgs | 25 Ohm @ 120mA, 0V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92 (TO-226) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |