Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / HS3J M6G
Part Number | HS3J M6G |
Datasheet | HS3J M6G datasheet |
Description | DIODE GEN PURP 600V 3A DO214AB |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Not For New Designs |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 10µA @ 600V |
Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AB, SMC |
Supplier Device Package | DO-214AB (SMC) |
Operating Temperature - Junction | -55°C ~ 150°C |