Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1110MFV,L3F
Product Introduction
RN1110MFV,L3F
- Part Number
- RN1110MFV,L3F
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS PREBIAS NPN 0.15W VESM
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 16pcs Stock Available.
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See Product Specifications
Product Specifications
| Part Number | RN1110MFV,L3F |
| Datasheet | RN1110MFV,L3F datasheet |
| Description | TRANS PREBIAS NPN 0.15W VESM |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | - |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
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