
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SQS966ENW-T1_GE3

| Part Number | SQS966ENW-T1_GE3 |
| Datasheet | SQS966ENW-T1_GE3 datasheet |
| Description | MOSFET N-CHAN 60V |
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
| Power - Max | 27.8W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8W |
| Supplier Device Package | PowerPAK® 1212-8W |