Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD60N10S4L12ATMA1
Product Introduction
IPD60N10S4L12ATMA1
- Part Number
- IPD60N10S4L12ATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH TO252-3
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- Automotive, AEC-Q101, HEXFET®
- Quantity
- 5195pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPD60N10S4L12ATMA1 |
| Datasheet | IPD60N10S4L12ATMA1 datasheet |
| Description | MOSFET N-CH TO252-3 |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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