Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPH2900ENH,L1Q
Part Number | TPH2900ENH,L1Q |
Datasheet | TPH2900ENH,L1Q datasheet |
Description | MOSFET N-CH 200V 33A SOP8 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVIII-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 29 mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP Advance (5x5) |
Package / Case | 8-PowerVDFN |