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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTI10N60P
Part Number | IXTI10N60P |
Description | MOSFET N-CH 600V 10A I2-PAK |
Manufacturer | IXYS |
Series | PolarHV™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 740 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1610pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 (I2PAK) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |