Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPH3212PS
Part Number | TPH3212PS |
Datasheet | TPH3212PS datasheet |
Description | GANFET N-CH 650V 27A TO220 |
Manufacturer | Transphorm |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 72 mOhm @ 17A, 8V |
Vgs(th) (Max) @ Id | 2.6V @ 400uA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
Vgs (Max) | ±18V |
Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |