Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FZ800R12KS4B2NOSA1
Part Number | FZ800R12KS4B2NOSA1 |
Datasheet | FZ800R12KS4B2NOSA1 datasheet |
Description | MODULE IGBT A-IHM130-1 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Not For New Designs |
IGBT Type | - |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 1200A |
Power - Max | 7600W |
Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 800A |
Current - Collector Cutoff (Max) | 5mA |
Input Capacitance (Cies) @ Vce | 52nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 125°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |