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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFD010PBF
Part Number | IRFD010PBF |
Datasheet | IRFD010PBF datasheet |
Description | MOSFET N-CH 50V 1.7A 4-DIP |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 860mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |