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Part Number | TPCA8010-H(TE12L,Q |
Datasheet | TPCA8010-H(TE12L,Q datasheet |
Description | MOSFET N-CH 200V 5.5A 8-SOPA |
Manufacturer | Toshiba Semiconductor and Storage |
Series | π-MOSV |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP Advance (5x5) |
Package / Case | 8-PowerVDFN |