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| Part Number | IXTA3N100D2HV | 
| Datasheet | IXTA3N100D2HV datasheet | 
| Description | MOSFET N-CH | 
| Manufacturer | IXYS | 
| Series | - | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 1000V | 
| Current - Continuous Drain (Id) @ 25°C | 3A (Tj) | 
| Drive Voltage (Max Rds On, Min Rds On) | 0V | 
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 1.5A, 0V | 
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 37.5nC @ 5V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V | 
| FET Feature | Depletion Mode | 
| Power Dissipation (Max) | 125W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | TO-263HV | 
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |