Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTA3N100D2HV
Part Number | IXTA3N100D2HV |
Datasheet | IXTA3N100D2HV datasheet |
Description | MOSFET N-CH |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 1.5A, 0V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 37.5nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263HV |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |