Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB030N08N3GATMA1
Part Number | IPB030N08N3GATMA1 |
Datasheet | IPB030N08N3GATMA1 datasheet |
Description | MOSFET N-CH 80V 160A TO263-7 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 155µA |
Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 8110pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7 |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |