Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI2399DS-T1-GE3
Part Number | SI2399DS-T1-GE3 |
Datasheet | SI2399DS-T1-GE3 datasheet |
Description | MOSFET P-CH 20V 6A SOT-23 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 835pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |