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Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / GB01SLT12-252
Part Number | GB01SLT12-252 |
Datasheet | GB01SLT12-252 datasheet |
Description | DIODE SILICON 1.2KV 1A TO252 |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Part Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 1A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 2µA @ 1200V |
Capacitance @ Vr, F | 69pF @ 1V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252 |
Operating Temperature - Junction | -55°C ~ 175°C |