Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF40R207
Part Number | IRF40R207 |
Datasheet | IRF40R207 datasheet |
Description | MOSFET N-CH 40V 56A DPAK |
Manufacturer | Infineon Technologies |
Series | HEXFET®, StrongIRFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2110pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |