Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NDD04N50Z-1G
Part Number | NDD04N50Z-1G |
Datasheet | NDD04N50Z-1G datasheet |
Description | MOSFET N-CH 500V 3A IPAK |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.7 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 308pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 61W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |