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| Part Number | IRF6604TR1 |
| Datasheet | IRF6604TR1 datasheet |
| Description | MOSFET N-CH 30V 12A DIRECTFET |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 12A, 7V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2270pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MQ |
| Package / Case | DirectFET™ Isometric MQ |