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Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / SMUN5313DW1T3G
Part Number | SMUN5313DW1T3G |
Description | TRANS NPN/PNP PREBIAS SOT363 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 187mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |