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Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1SS307(TE85L,F)
Part Number | 1SS307(TE85L,F) |
Datasheet | 1SS307(TE85L,F) datasheet |
Description | DIODE GEN PURP 30V 100MA SMINI |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 30V |
Current - Average Rectified (Io) | 100mA |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10µA @ 30V |
Capacitance @ Vr, F | 6pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |
Operating Temperature - Junction | 125°C (Max) |