Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC079N10NSGATMA1
Part Number | BSC079N10NSGATMA1 |
Datasheet | BSC079N10NSGATMA1 datasheet |
Description | MOSFET N-CH 100V 100A TDSON-8 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.9 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5900pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |