Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK17E65W,S1X
Part Number | TK17E65W,S1X |
Datasheet | TK17E65W,S1X datasheet |
Description | MOSFET N-CH 650V 17.3A TO-220AB |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 8.7A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 300V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |