Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTA115EMT2L

Product Introduction

DTA115EMT2L

Part Number
DTA115EMT2L
Manufacturer/Brand
Rohm Semiconductor
Description
TRANS PREBIAS PNP 150MW VMT3
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
7pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number DTA115EMT2L
Datasheet DTA115EMT2L datasheet
Description TRANS PREBIAS PNP 150MW VMT3
Manufacturer Rohm Semiconductor
Series -
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 20mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 100 kOhms
Resistor - Emitter Base (R2) 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VMT3

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

RN2314(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

RN2317(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

RN2318(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

RN1302,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

RN1303(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

RN1309(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Related Products