Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8457DB-T1-E1
Part Number | SI8457DB-T1-E1 |
Datasheet | SI8457DB-T1-E1 datasheet |
Description | MOSFET P-CH 12V MICROFOOT |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-MICRO FOOT® (1.6x1.6) |
Package / Case | 4-UFBGA |