Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCB199N65S3
Part Number | FCB199N65S3 |
Datasheet | FCB199N65S3 datasheet |
Description | MOSFET N-CH 650V 14A D2PAK |
Manufacturer | ON Semiconductor |
Series | SuperFET® III |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 199 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1.4mA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1225pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 98W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |