Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIA817EDJ-T1-GE3
Part Number | SIA817EDJ-T1-GE3 |
Datasheet | SIA817EDJ-T1-GE3 datasheet |
Description | MOSFET P-CH 30V 4.5A SC-70-6 |
Manufacturer | Vishay Siliconix |
Series | LITTLE FOOT® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 15V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 1.9W (Ta), 6.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Dual |
Package / Case | PowerPAK® SC-70-6 Dual |