Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1109CT(TPL3)
Part Number | RN1109CT(TPL3) |
Datasheet | RN1109CT(TPL3) datasheet |
Description | TRANS PREBIAS NPN 0.05W CST3 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |