Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSBA115TF3T5G
Part Number | NSBA115TF3T5G |
Datasheet | NSBA115TF3T5G datasheet |
Description | TRANS PREBIAS PNP 254MW SOT1123 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 254mW |
Mounting Type | Surface Mount |
Package / Case | SOT-1123 |
Supplier Device Package | SOT-1123 |