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Product Introduction

MJD112-1G

Part Number
MJD112-1G
Manufacturer/Brand
ON Semiconductor
Description
TRANS NPN DARL 100V 2A IPAK
Category
Transistors - Bipolar (BJT) - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
5056pcs Stock Available.

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Product Specifications

Part Number MJD112-1G
Datasheet MJD112-1G datasheet
Description TRANS NPN DARL 100V 2A IPAK
Manufacturer ON Semiconductor
Series -
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75W
Frequency - Transition 25MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK

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