Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SK2845(TE16L1,Q)

Product Introduction

2SK2845(TE16L1,Q)

Part Number
2SK2845(TE16L1,Q)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 900V 1A DP
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
151pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number 2SK2845(TE16L1,Q)
Datasheet 2SK2845(TE16L1,Q) datasheet
Description MOSFET N-CH 900V 1A DP
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DP
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Latest Products for Transistors - FETs, MOSFETs - Single

IXTY1N120P

IXYS

MOSFET N-CH 1200V 1A TO-252

IXTY1N80

IXYS

MOSFET N-CH 800V 750MA TO-252AA

IXTY1N80P

IXYS

MOSFET N-CH 800V 1A TO-252

IXTY1R4N100P

IXYS

MOSFET N-CH 1000V 1.4A TO-252

IXTY1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO-252

IXTY1R4N120PHV

IXYS

MOSFET N-CH

Related Products