Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / MMDT5551-7-F

Product Introduction

MMDT5551-7-F

Part Number
MMDT5551-7-F
Manufacturer/Brand
Diodes Incorporated
Description
TRANS 2NPN 160V 0.2A SOT363
Category
Transistors - Bipolar (BJT) - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
135131pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number MMDT5551-7-F
Datasheet MMDT5551-7-F datasheet
Description TRANS 2NPN 160V 0.2A SOT363
Manufacturer Diodes Incorporated
Series -
Part Status Active
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 200mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363

Latest Products for Transistors - Bipolar (BJT) - Arrays

BCV62BE6327HTSA1

Infineon Technologies

TRANS 2PNP 30V 0.1A SOT143

BCV63B,215

Nexperia USA Inc.

TRANS 2NPN 30V/6V 0.1A SOT143B

BCV63,215

Nexperia USA Inc.

TRANS 2NPN 30V/6V 0.1A SOT143B

BCV64B,215

Nexperia USA Inc.

TRANS 2PNP 30V/6V 0.1A SOT143B

BCV62BE6433HTMA1

Infineon Technologies

TRANS 2PNP 30V 0.1A SOT143

BCV62CE6327HTSA1

Infineon Technologies

TRANS 2PNP 30V 0.1A SOT143