Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / MMDT5551-7-F
Part Number | MMDT5551-7-F |
Datasheet | MMDT5551-7-F datasheet |
Description | TRANS 2NPN 160V 0.2A SOT363 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 200mW |
Frequency - Transition | 300MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |