Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / NGTD13T65F2WP
Part Number | NGTD13T65F2WP |
Datasheet | NGTD13T65F2WP datasheet |
Description | IGBT TRENCH FIELD STOP 650V DIE |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
Power - Max | - |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | - |
Test Condition | - |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |