Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD050N10N5ATMA1

Product Introduction

IPD050N10N5ATMA1

Part Number
IPD050N10N5ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 80A TO252-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
704pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IPD050N10N5ATMA1
Datasheet IPD050N10N5ATMA1 datasheet
Description MOSFET N-CH 100V 80A TO252-3
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 50V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Latest Products for Transistors - FETs, MOSFETs - Single

IPB50N12S3L15ATMA1

Infineon Technologies

MOSFET N-CHANNEL100

IPB65R110CFDATMA2

Infineon Technologies

HIGH POWERLEGACY

IPB65R150CFDATMA2

Infineon Technologies

HIGH POWERLEGACY

IPB65R190CFDATMA2

Infineon Technologies

HIGH POWERLEGACY

IPB65R310CFDATMA2

Infineon Technologies

LOW POWERLEGACY

IPB70N12S311ATMA1

Infineon Technologies

MOSFET N-CHANNEL100