Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFX360N10T
Part Number | IXFX360N10T |
Datasheet | IXFX360N10T datasheet |
Description | MOSFET N-CH 100V 360A PLUS247 |
Manufacturer | IXYS |
Series | GigaMOS™ HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 360A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.9 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 525nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 33000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1250W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 |
Package / Case | TO-247-3 |