Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4963BDY-T1-GE3
Part Number | SI4963BDY-T1-GE3 |
Datasheet | SI4963BDY-T1-GE3 datasheet |
Description | MOSFET 2P-CH 20V 4.9A 8SOIC |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Active |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.9A |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |