Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSVMMUN2132LT1G
Product Introduction
NSVMMUN2132LT1G
- Part Number
- NSVMMUN2132LT1G
- Manufacturer/Brand
- ON Semiconductor
- Description
- TRANS PREBIAS PNP 246MW SOT23-3
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 5pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | NSVMMUN2132LT1G |
| Datasheet | NSVMMUN2132LT1G datasheet |
| Description | TRANS PREBIAS PNP 246MW SOT23-3 |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 246mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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