Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF6662TRPBF
Part Number | IRF6662TRPBF |
Datasheet | IRF6662TRPBF datasheet |
Description | MOSFET N-CH 100V 8.3A DIRECTFET |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id | 4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1360pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MZ |
Package / Case | DirectFET™ Isometric MZ |