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Product Introduction

SI4966DY-T1-GE3

Part Number
SI4966DY-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET 2N-CH 20V 8SOIC
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
9911pcs Stock Available.

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Product Specifications

Part Number SI4966DY-T1-GE3
Datasheet SI4966DY-T1-GE3 datasheet
Description MOSFET 2N-CH 20V 8SOIC
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

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