Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTH60N25
Part Number | IXTH60N25 |
Datasheet | IXTH60N25 datasheet |
Description | MOSFET N-CH 250V 60A TO-247 |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 164nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 400W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Package / Case | TO-247-3 |