Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / HN4B04J(TE85L,F)
Part Number | HN4B04J(TE85L,F) |
Datasheet | HN4B04J(TE85L,F) datasheet |
Description | TRANS NPN/PNP 30V 0.5A SMV |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 100mA, 1V |
Power - Max | 300mW |
Frequency - Transition | 200MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74A, SOT-753 |
Supplier Device Package | SMV |