
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / HN4B01JE(TE85L,F)

| Part Number | HN4B01JE(TE85L,F) |
| Datasheet | HN4B01JE(TE85L,F) datasheet |
| Description | TRANS NPN/PNP 50V 0.15A ESV PLN |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | NPN, PNP (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10MA, 100MA |
| Power - Max | 100mW |
| Frequency - Transition | 80MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |