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Product Introduction
APT65GP60B2G
- Part Number
- APT65GP60B2G
- Manufacturer/Brand
- Microsemi Corporation
- Description
- IGBT 600V 100A 833W TMAX
- Category
- Transistors - IGBTs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- POWER MOS 7®
- Quantity
- 307pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | APT65GP60B2G |
| Datasheet | APT65GP60B2G datasheet |
| Description | IGBT 600V 100A 833W TMAX |
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Current - Collector Pulsed (Icm) | 250A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
| Power - Max | 833W |
| Switching Energy | 605µJ (on), 896µJ (off) |
| Input Type | Standard |
| Gate Charge | 210nC |
| Td (on/off) @ 25°C | 30ns/91ns |
| Test Condition | 400V, 65A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
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